- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,236
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 620 mA | 600 mOhms | 2.4 nC | ||||||||
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7,692
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 780 mA | 600 mOhms | 2.4 nC | ||||||||
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3,346
In-stock
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onsemi | MOSFET NFET SOT23 20V 3.2A 80MO | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 70 mOhms | 2.4 nC | ||||||
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1,862
In-stock
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onsemi | MOSFET NCH 200V 0.5A 4V DRIVE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 500 mA | 2.8 Ohms | 1.2 V | 2.4 nC | Enhancement | ||||
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65,800
In-stock
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Fairchild Semiconductor | MOSFET 50V NCh Logic Level Enhancement Mode FET | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 220 mA | 2.5 Ohms | 2.4 nC | Enhancement | ||||||
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GET PRICE |
59,200
In-stock
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Texas instruments | MOSFET 30V N-CH Pwr MOSFETs | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 29 mOhms | 1.6 V | 2.4 nC | NexFET |
