- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
17,192
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | OptiMOS | |||
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4,007
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
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GET PRICE |
9,000
In-stock
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Vishay Semiconductors | MOSFET 60V 8A 34W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 8 A, 8 A | 0.03 Ohms, 0.03 Ohms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | TrenchFET | |||
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56,750
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
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4,680
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
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2,980
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 15 A, 15 A | 27 mOhms, 27 mOhms | 1.5 V, 1.5 V | 20 nC, 20 nC | Enhancement | |||||
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1,475
In-stock
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onsemi | MOSFET NFET SO8FL 60V 22A 3 | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 22 A, 22 A | 27 mOhms, 27 mOhms | 1 V, 1 V | 20 nC, 20 nC | Enhancement | |||||
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GET PRICE |
4,990
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.6A SO-8 | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.6 A, 2.6 A | 120 mOhms, 120 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | SIPMOS | |||
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GET PRICE |
24,930
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.6A SO-8 | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.6 A, 2.6 A | 120 mOhms, 120 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | OptiMOS | |||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 17A 39mOhmDual N-CH | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 17 A, 17 A | 31 mOhms, 31 mOhms | 1 V, 1 V | 20 nC, 20 nC | Enhancement |