- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,692
In-stock
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Siliconix / Vishay | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.4 A | 0.049 Ohms | - 1.4 V | 10.3 nC | Enhancement | |||
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2,751
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 5.6 A | 68 mOhms | 1 V | 10.3 nC | Enhancement | |||
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65,800
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8.5 A | 68 mOhms | 10.3 nC | Enhancement | ||||
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2,380
In-stock
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onsemi | MOSFET NFET U8FL 30V 22A 17MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22.1 A | 13 mOhms | 1.3 V | 10.3 nC | Enhancement |
