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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,151
In-stock
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Fairchild Semiconductor | MOSFET 150V 2A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 452 mOhms | 800 mV | 4.5 nC | Enhancement | PowerTrench | ||||
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5,965
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Chan UniFET | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | 5 V | 4.5 nC | ||||||||
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13,233
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 900 mA | 1.2 Ohms | 5.5 V | 4.5 nC | ||||||
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819
In-stock
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STMicroelectronics | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 1.26 Ohms | 3 V | 4.5 nC | ||||||||
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850
In-stock
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STMicroelectronics | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 1.26 Ohms | 3 V | 4.5 nC | ||||||||
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4,000
In-stock
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onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.5 V | 4.5 nC | ||||||
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VIEW | onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.1 V | 4.5 nC | Enhancement |