- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
555
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | ||||
|
188
In-stock
|
IXYS | MOSFET TRENCHT2 PWR MOSFET 75V 520A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | |||||
|
14
In-stock
|
IXYS | MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 465 A | 1.3 mOhms | 4 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | |||||
|
24
In-stock
|
IXYS | MOSFET | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 500 A | 1.6 mOhms | 2.5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
|
16
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 520A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | |||||
|
VIEW | IXYS | MOSFET 30 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | 5 V | 545 nC | Enhancement |