- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,493
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 69 mOhms | 2 V | 25.2 nC | Enhancement | |||||
|
VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100mOhm 3V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 18 A | 100 mOhms | 1 V | 25.2 nC | Enhancement | |||||
|
1,710
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | 20 V | SMD/SMT | PowerDI3333-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 54 mOhms | 1.5 V | 25.2 nC | Enhancement | PowerDI | |||||
|
6,000
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 99 mOhms | 25.2 nC | Enhancement | PowerDI |