- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Applied Filters :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
34,976
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | |||
|
2,997
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET, PowerClip 33 Single | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 174 A | 1.3 mOhms | 1.2 V | 67 nC | Enhancement | PowerTrench Power Clip | ||||
|
49
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | SMD/SMT | TO-268-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | ||||||
|
58
In-stock
|
Fairchild Semiconductor | MOSFET Single NCh 55V 7mOhm Power MOS UltraFET | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 38 A | 35 mOhms | 3 V | 67 nC | UltraFET | ||||||
|
9
In-stock
|
IXYS | MOSFET HIGH VOLT PWR MOSFET 1500V 6A | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 6 A | 3.5 Ohms | 5 V | 67 nC | Enhancement | |||||||
|
194
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 5.3 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | ||||
|
34
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | ||||||
|
15,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 5.3 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS |