- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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999
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 4 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | ||||||
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1,500
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | ||||||
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128,001
In-stock
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Siliconix / Vishay | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 0.125 Ohms | 1.5 V | 5.3 nC | Enhancement | TrenchFET | ||||
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3,147
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 2.4 A, - 1.7 A | 135 mOhms, 270 mOhms | 5.3 nC | |||||||||
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2,728
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 10 A | 210 mOhms | 5.3 nC | |||||||||
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1,228
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 360 mA | 2.2 Ohms | - 2 V | 5.3 nC | Enhancement | |||||
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2,200
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 2.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.4 A | 135 mOhms | 5.3 nC | Enhancement | ||||||
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GET PRICE |
10,400
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V Logic Level with Zener | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.7 A | 105 mOhms | 1.7 V | 5.3 nC | PowerTrench | ||||
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678
In-stock
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Texas instruments | MOSFET 30V NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 11.8 mOhms | 1.5 V | 5.3 nC | NexFET |