- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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25,834
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
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3,840
In-stock
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onsemi | MOSFET PCH 80MA 100V SOT-23 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 170 mA | 12.5 Ohms | - 2.6 V | 900 pC | Enhancement | |||
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33,861
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
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17,194
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
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46,798
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | |||
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3,970
In-stock
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Diodes Incorporated | MOSFET P-Ch -50V Enh FET 10Ohm -5Vgs -130mA | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 1.2 Ohms | - 2 V | 900 pC | Enhancement | |||
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2,785
In-stock
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onsemi | MOSFET NCH 120MA 100V SOT23 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 270 mA | 6 Ohms | 1.2 V | 900 pC | Enhancement | |||
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8,460
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
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10,970
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
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3,506
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.4 Ohms | 800 mV | 900 pC | Enhancement | |||
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5,698
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement |
