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- Vgs - Gate-Source Voltage :
- Mounting Style :
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- Packaging :
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- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Applied Filters :
172 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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6,324
In-stock
|
Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | |||||
|
|
7,399
In-stock
|
Fairchild Semiconductor | MOSFET TO-252 DPAK P-CH 60V | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.4 A | 185 mOhms | Enhancement | QFET | |||||
|
|
5,574
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 3.2 A | 2.2 Ohms | Enhancement | QFET | |||||
|
|
4,605
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V 2.6A/2.7OHM | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | Enhancement | QFET | |||||
|
|
4,225
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | |||||
|
|
3,631
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.6 Ohms | Enhancement | QFET | |||||
|
|
GET PRICE |
43,400
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 70 mOhms | Enhancement | QFET | ||||
|
|
3,478
In-stock
|
Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | QFET | |||||
|
|
GET PRICE |
50,000
In-stock
|
onsemi | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | Enhancement | QFET | ||||
|
|
4,032
In-stock
|
Fairchild Semiconductor | MOSFET 500V P-Channel QFET | 30 V | SMD/SMT | Die | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.1 A | 4.9 Ohms | Enhancement | QFET | |||||
|
|
1,481
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 40 A | 16 mOhms | Enhancement | QFET | |||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/8A/QFET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 6.3 A | 1.6 Ohms | 5 V | 35 nC | Enhancement | QFET | |||
|
|
1,617
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 45.6 A | 42 mOhms | Enhancement | QFET | |||||
|
|
1,990
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | Enhancement | QFET | |||||
|
|
3,657
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 47 A | 26 mOhms | Enhancement | QFET | |||||
|
|
1,860
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | QFET | |||||
|
|
1,228
In-stock
|
Fairchild Semiconductor | MOSFET -33.5A,-100V, P-ch | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | QFET | |||||
|
|
1,071
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
|
1,058
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/7A/A.QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7.2 A | 1.1 Ohms | Enhancement | QFET | |||||
|
|
582
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 43.5 A | 69 mOhms | Enhancement | QFET | |||||
|
|
825
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.5 A | 240 mOhms | Enhancement | QFET | |||||
|
|
GET PRICE |
3,010
In-stock
|
onsemi | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 110 mOhms | Enhancement | QFET | ||||
|
|
4,864
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | QFET | |||||||||
|
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4,883
In-stock
|
Fairchild Semiconductor | MOSFET 100V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.7 A | 350 mOhms | Enhancement | QFET | |||||
|
|
5,176
In-stock
|
Fairchild Semiconductor | MOSFET 600V 0.2A 11.5Ohm N-Channel | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 200 mA | 11.5 Ohms | Enhancement | QFET | |||||
|
|
3,145
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/100V/12.8A 0.18OHM | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12.8 A | 180 mOhms | Enhancement | QFET | |||||
|
|
2,490
In-stock
|
Fairchild Semiconductor | MOSFET 600V 2.4A N-Channel Q-FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.4 Ohms | 10.5 nC | Enhancement | QFET | ||||
|
|
2,901
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 110 mOhms | Enhancement | QFET | |||||
|
|
2,362
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/600V 3A/3.6OHM | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 3.4 Ohms | Enhancement | QFET | |||||
|
|
1,820
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/400 /6A/CFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1.1 Ohms | Enhancement | QFET |
