- Manufacture :
- FET Type :
- Drive Voltage (Max Rds On, Min Rds On) :
- Supplier device packaging :
- Current at 25°C-Continuous Drain (Id) :
- On resistance at different Id and Vgs (maximum) :
- Vgs(th) (maximum) for different Id :
- Gate charge (Qg) (maximum) at different Vgs :
- Input capacitance (Ciss) (maximum) at different Vds :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Technology | Operating Temperature | FET Type | Package/shell | Drive Voltage (Max Rds On, Min Rds On) | Supplier device packaging | Product Family | Drain-source voltage (Vdss) | Current at 25°C-Continuous Drain (Id) | On resistance at different Id and Vgs (maximum) | Vgs(th) (maximum) for different Id | Gate charge (Qg) (maximum) at different Vgs | Vgs (maximum) | Input capacitance (Ciss) (maximum) at different Vds | Power dissipation (maximum) | Type of installation | FET function | |
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7,200
In-stock
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Infineon Technologies | MOSFET N-CH 8TDSON | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N channel | 8-PowerTDFN | 4.5V, 10V | SuperSO8 | 60V | 100A (Tc) | 2.3 milliohm @ 50A, 10V | 2.3V @ 49µA | 30nC @ 4.5V | ±20V | 4400pF @ 30V | 83W (Tc) | Surface mount type | Standard | ||||
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GET PRICE |
50,000
In-stock
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Vishay Semiconductors | MOSFET P-Chan 200V 12 Amp | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P channel | 10V | TO-247-3 | Transistor-FET, MOSFET-single | 200V | 12A (Tc) | 500 milliohms @ 7.2A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | 150W (Tc) | Through Hole | ||||
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GET PRICE |
12,000
In-stock
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Vishay Semiconductors | MOSFET 800V Single N-Channel HEXFET | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N channel | 10V | TO-220AB | Transistor-FET, MOSFET-single | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | 54W (Tc) | Through Hole |
