MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Number of Channels	Length	Width	Height	Configuration	Technology	Transistor Polarity	Channel Mode	Rise Time	Fall Time	Transistor Type	Product Type	Package	Typical Turn-Off Delay Time	Typical Turn-On Delay Time	Subcategory	Installation style	trademark	Vds-drain source breakdown voltage	Id-continuous drain current	Rds On-drain source on-resistance	Pd-power dissipation	Typical shutdown delay time	Typical on-delay time	Minimum working temperature	Package / Box	Maximum working temperature	Factory packing quantity	Vds-Drain-source breakdown voltage	Rds On-Drain-source on resistance	Vgs-gate-source voltage	Vgs th- gate-source threshold voltage	Qg-gate charge
	2SK2837		GET PRICE	PDF RFQ	7,500 In-stock	Toshiba Semiconductor	Silicon N Channel MOS Type (π−MOSV)	30 V	- 55 C	1 Channel	15.5 mm	4.5 mm	20 mm	Single	Si	N-Channel	Enhancement	30 ns	50 ns							Through Hole		500 V	20 A	270 mOhms	150 W	71 ns	23 ns
	IPW60R037CSFD	Per Unit $10.647		PDF RFQ	12,500 In-stock	Infineon Technologies	HIGH POWER_NEW			1 Channel				Single	Si	N-Channel	Enhancement	30 ns	6 ns	1 N-Channel	MOSFET	Tube	196 ns	53 ns	MOSFETs	Through Hole	Infineon Technologies		54 A		245 W			-55 C	TO-247-3	+ 150 C	240	650 V	37 mOhms	-20 V, + 20 V	3.5 V	136 nC

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