- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,465
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 8 V, +/- 8 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 20 V | 9.5 A, 8.7 A | 9 mOhms, 14 mOhms | 600 mV, - 1 V | 32 nC, 56 nC | Enhancement | |||
|
|
5,070
In-stock
|
Diodes Incorporated | MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 20 V | 6 A, - 3.4 A | 17 mOhms, 55 mOhms | 400 mV, - 1 V | 18.5 nC, 11.5 nC | Enhancement | |||
|
|
2,902
In-stock
|
Diodes Incorporated | MOSFET Comp ENH Mode FET 12V Vdss 8V VGss | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | + 12 V, - 12 V | 5.6 A, - 3.8 A | 17 mOhms, 37 mOhms | 400 mV, - 1 V | 19.6 nC, 17.9 nC | Enhancement | |||
|
|
3,942
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 5.1 A, - 3.9 A | 17 mOhms, 37 mOhms | 400 mV, - 1 V | 23.1 nC, 20.8 nC | Enhancement | |||
|
|
5,129
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V, - 12 V | - 3.8 A, - 3.8 A | 37 mOhms, 37 mOhms | - 1 V, - 1 V | 17.9 nC, 17.9 nC | Enhancement | |||
|
|
2,358
In-stock
|
Diodes Incorporated | MOSFET MOSFET P-CHAN | +/- 8 V, +/- 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 6.04 A, - 6.04 A | 23 mOhms, 23 mOhms | - 1 V, - 1 V | 15.4 nC, 15.4 nC | Enhancement | |||
|
|
1,542
In-stock
|
Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | |||
|
|
540
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 330 mA, - 330 mA | 3.6 Ohms, 3.6 Ohms | - 300 mV, - 300 mV | 1.2 nC, 1.2 nC | Enhancement | ||||
|
|
12,000
In-stock
|
Nexperia | MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 1 Ohms, 2.8 Ohms | 0.9 V, - 0.9 V | 0.17 nC, 0.23 nC | Enhancement | |||
|
|
11,908
In-stock
|
Diodes Incorporated | MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 900 mA, - 900 mA | 180 mOhms, 180 mOhms | - 1.2 V, - 1.2 V | 2.1 nC, 2.1 nC | Enhancement | |||
|
|
VIEW | Siliconix / Vishay | MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 0.85 A, - 0.85 A | 0.15 Ohms, 0.5 Ohms | 0.45 V, - 1.5 V | 0.93 nC, 1 nC | Enhancement | |||
|
|
VIEW | Siliconix / Vishay | MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified | +/- 8 V, +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 3.9 A, - 3.9 A | 0.13 Ohms, 0.13 Ohms | - 1.5 V, - 1.5 V | 4.6 nC, 4.6 nC | Enhancement | |||
|
|
VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V, - 12 V | - 3.8 A, - 3.8 A | 37 mOhms, 37 mOhms | - 1 V, - 1 V | 17.9 nC, 17.9 nC | Enhancement |
