- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,889
In-stock
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Micrel / Microchip Technology | MOSFET | 1.8 V | SMD/SMT | SC-70-6 | - 40 C | + 150 C | Reel | Si | P-Channel | - 6 V | - 2 A | 70 mOhms | - 0.5 V | ||||||
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51,290
In-stock
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Micrel / Microchip Technology | MOSFET | 1.8 V | SMD/SMT | SC-70-6 | - 40 C | + 150 C | Reel | Si | P-Channel | - 6 V | - 2 A | 70 mOhms | - 0.5 V | ||||||
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3,796
In-stock
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Micrel / Microchip Technology | MOSFET | 1.8 V | SMD/SMT | SOT-143-4 | Reel | Si | P-Channel | - 6 V | - 1.8 A | 160 mOhms | 1.2 V | ||||||||
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2,995
In-stock
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Micrel / Microchip Technology | MOSFET | 1.8 V | SMD/SMT | SOT-143-4 | Reel | Si | P-Channel | - 6 V | - 1.8 A | 160 mOhms | |||||||||
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10,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V | 1.8 V | SMD/SMT | CST3B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 250 mOhms | 1.2 V | 1.1 nC | Enhancement | |||
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819
In-stock
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onsemi | MOSFET NCH+NCH 1.8 DRIVE SERIES | 1.8 V | SMD/SMT | SOT-363-6 | Reel | Si | N-Channel | 20 V | 2 A | 160 mOhms |
