- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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114
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 94 A | 35 mOhms | 3 V | 320 nC | Enhancement | ||||||
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24
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 650 V, 650 V | 94 A, 94 A | 30 mOhms, 30 mOhms | 3 V | 580 nC | Enhancement | ||||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 70 A | 75 mOhms | 4 V | 330 nC | Enhancement | POWER MOS 8 | |||||
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28
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 65 mOhms | 3 V | 340 nC | Enhancement | |||||
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4
In-stock
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Microsemi | MOSFET Power MOSFET - Linear | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 58 A | 90 mOhms | 4 V | Enhancement | ||||||
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56
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 90 mOhms | 4 V | 280 nC | Enhancement | POWER MOS 8 | |||||
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25
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 70 A | 75 mOhms | 4 V | 330 nC | Enhancement | POWER MOS 8 | |||||
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23
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 56 A | 85 mOhms | 4 V | 220 nC | Enhancement | POWER MOS 8 | ||||
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11
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 24 A | 630 mOhms | 4 V | 260 nC | Enhancement | |||||
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32
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 75 A | 75 mOhms | 4 V | 290 nC | Enhancement | ||||||
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20
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | |||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 75 A | 75 mOhms | 3 V | 290 nC | Enhancement | |||||
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16
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 56 A | 100 mOhms | 4 V | 220 nC | Enhancement | ||||||
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7
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 30 A | 440 mOhms | 4 V | 260 nC | Enhancement | |||||
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9
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 37 A | 330 mOhms | 4 V | 305 nC | Enhancement | ||||||
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186
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 29 A | 530 mOhms | 4 V | 300 nC | Enhancement | |||||
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145
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement | ||||||
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21
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 106 A | 35 mOhms | 3 V | 308 nC | Enhancement |
