- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,570
In-stock
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Nexperia | MOSFET 30 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 3.2 A | 49 mOhms | 1.5 V | 3.6 nC | Enhancement | ||||
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4,990
In-stock
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Nexperia | MOSFET 80 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 80 V | 1.1 A | 345 mOhms | 1.7 V | 3 nC | Enhancement | ||||
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2,660
In-stock
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Nexperia | MOSFET 12V P-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.2 A | 59 mOhms | - 1 V | 12 nC | Enhancement | |||
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5,684
In-stock
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Nexperia | MOSFET 20 V, P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 950 mOhms | - 400 mV | 6.8 nC | Enhancement | |||
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2,235
In-stock
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Nexperia | MOSFET 30 V, P-channel Trench MOSFET | +/- 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.4 A | 100 mOhms | - 2.5 V | 11 nC | Enhancement | |||
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1,631
In-stock
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Nexperia | MOSFET 20 V, N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 120 mOhms | 400 mV | 5.7 nC | Enhancement |
