- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14,078
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 11 A | 10 mOhms | 0.8 V | 27.3 nC | Enhancement | ||||
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2,526
In-stock
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Diodes Incorporated | MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC | 40 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 10 Ohms | - 500 mV | 2.8 nC | Enhancement | ||||
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5,255
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | ||||
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3,216
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 2.3 Ohms | 1 V | 7.6 nC | Enhancement | ||||
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4,209
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | ||||
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7,939
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
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8,608
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | ||||
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3,685
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | ||||
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6,573
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
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4,990
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.2 A | 75 mOhms | - 1.1 V | 14.4 nC | Enhancement | ||||
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4,309
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10.5 A | 9.3 mOhms | 500 mV | 45.6 nC | Enhancement | ||||
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1,979
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10.5 A | 8.4 mOhms | 500 mV | 25.8 nC | Enhancement | ||||
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2,970
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 7.3 A | 19 mOhms | - 1 V | 28.2 nC | Enhancement | ||||
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722
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.3 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | ||||
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24
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 6.7 A | 20 mOhms | - 1 V | 48.7 nC | Enhancement | ||||
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8,995
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6 A | 33 mOhms | - 2.2 V | 23.2 nC | Enhancement | ||||
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27,000
In-stock
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Diodes Incorporated | MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A | + /- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 11.2 A | 46 mOhms | - 0.8 V | 28.4 nC | Enhancement | ||||
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15,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | U-DFN2020-E-6 | Reel | 1 Channel | Si | N-Channel | ||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K | U-DFN2020-E-6 | Reel | Si | ||||||||||||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC | U-DFN2020-E-6 | Reel | 1 Channel | Si | P-Channel | ||||||||||||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | U-DFN2020-E-6 | Reel | 1 Channel | Si | N-Channel | ||||||||||||||
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VIEW | Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | U-DFN2020-E-6 | Reel | 1 Channel | Si | N-Channel | ||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | U-DFN2020-E-6 | Reel | Si | ||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET | U-DFN2020-E-6 | Reel | 1 Channel | Si | N-Channel |
