MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Series	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	BTS282Z E3230		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 49V 80A TO220-7			TO-220-7			TEMPFET®	Tube		MOSFET (Metal Oxide)								-40°C ~ 175°C (TJ)	Obsolete	P-TO220-7-230	0	500	Temperature Sensing Diode	49V	80A (Tc)	6.5 mOhm @ 36A, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	4.5V, 10V	±20V	300W (Tc)
	BTS282ZAKSA1		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 49V 80A TO220-7			TO-220-7			TEMPFET®	Tube		MOSFET (Metal Oxide)								-40°C ~ 175°C (TJ)	Obsolete	P-TO220-7-3	0	500	Temperature Sensing Diode	49V	80A (Tc)	6.5 mOhm @ 36A, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	4.5V, 10V	±20V	300W (Tc)
	BTS282ZE3230AKSA2	Per Unit $5.950		PDF RFQ	432 In-stock	Infineon Technologies	MOSFET N-CH 49V 80A TO220-7			TO-220-7			TEMPFET®	Tube		MOSFET (Metal Oxide)								-40°C ~ 175°C (TJ)	Active	PG-TO-220-7-12	0	1	Temperature Sensing Diode	49V	80A (Tc)	6.5 mOhm @ 36A, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	4.5V, 10V	±20V	300W (Tc)
	BTS282ZE3230AKSA2	1+ $4.120 10+ $3.500 100+ $3.040 250+ $2.880		PDF RFQ	226 In-stock	Infineon Technologies	MOSFET TEMPFET	20 V	Through Hole	TO-220-7	- 55 C	+ 150 C		Tube	1 Channel	Si	N-Channel	49 V	80 A	5.8 mOhms	1.2 V	232 nC	Enhancement

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