- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1 A, - 1 A (1)
- - 1.5 A (5)
- - 1.6 A (1)
- - 130 mA (1)
- - 140 mA (1)
- - 160 mA (1)
- - 2 A (4)
- - 200 mA (2)
- - 3 A (1)
- - 3.2 A (1)
- - 3.5 A (2)
- - 390 mA, - 390 mA (2)
- - 4 A (2)
- - 4.5 A (4)
- - 430 mA (1)
- - 5 A (5)
- - 6 A (1)
- - 880 mA (1)
- - 9 A (1)
- - 900 mA, - 900 mA (2)
- 0.78 A, 0.78 A (1)
- 0.8 A, 0.8 A (1)
- 0.85 A, - 0.85 A (2)
- 1 A (2)
- 1.2 A (1)
- 1.4 A (2)
- 1.5 A (2)
- 1.7 A (2)
- 1.8 A (1)
- 100 mA (1)
- 1066 mA, 845 mA (1)
- 115 mA (3)
- 160 mA (2)
- 170 mA (1)
- 170 mA, 170 mA (1)
- 180 mA (2)
- 180 mA, 180 mA (1)
- 2 A (1)
- 2 A, - 1.5 A (1)
- 2.5 A (1)
- 2.8 A (1)
- 200 mA (4)
- 220 mA, 220 mA (1)
- 240 mA (2)
- 250 mA (4)
- 250 mA, 250 mA (1)
- 260 mA (1)
- 295 mA (1)
- 300 mA (1)
- 300 mA, 300 mA (5)
- 305 mA (1)
- 320 mA (4)
- 330 mA, 330 mA (1)
- 350 mA (3)
- 350 mA, - 200 mA (1)
- 350 mA, 350 mA (2)
- 360 mA (2)
- 4 A (1)
- 400 mA (1)
- 490 mA (1)
- 5.5 A (2)
- 500 mA, 500 mA (1)
- 540 mA (2)
- 630 mA (2)
- 630 mA, 775 mA (1)
- 650 mA, 450 mA (2)
- 7 A (2)
- 725 mA (1)
- 8 A (1)
- 800 mA (1)
- 800 mA, 800 mA (1)
- 860 mA (1)
- 870 mA (1)
- 880 mA, 880 mA (3)
- 950 mA, 530 mA (3)
- 950 mA, 950 mA (4)
- Rds On - Drain-Source Resistance :
-
- 0.045 Ohms (1)
- 0.085 Ohms (1)
- 0.125 Ohms (1)
- 0.15 Ohms, 0.5 Ohms (1)
- 0.2 Ohms, 0.2 Ohms (2)
- 0.21 Ohms, 0.788 Ohms (1)
- 0.23 Ohms (1)
- 1 Ohms (1)
- 1 Ohms, 1 Ohms (1)
- 1.05 Ohms, 1.05 Ohms (1)
- 1.2 Ohms, 1.2 Ohms (2)
- 1.4 Ohms (2)
- 1.5 Ohms (2)
- 1.6 Ohms (4)
- 1.6 Ohms, 1.6 Ohms (3)
- 1.8 Ohms (1)
- 10.4 Ohms (1)
- 11 Ohms (1)
- 111 mOhms (2)
- 115 mOhms (1)
- 120 mOhms (2)
- 131 mOhms (2)
- 136 mOhms, 266 mOhms (1)
- 140 mOhms (1)
- 150 mOhms (1)
- 155 mOhms (1)
- 16.9 mOhms (1)
- 160 mOhms (1)
- 180 mOhms, 180 mOhms (2)
- 188 mOhms (1)
- 190 mOhms (2)
- 199 mOhms (1)
- 2.1 Ohms (1)
- 2.4 Ohms, 2.4 Ohms (1)
- 2.7 Ohms (1)
- 2.8 Ohms (3)
- 2.8 Ohms, 2.8 Ohms (1)
- 200 mOhms, 200 mOhms (1)
- 200 mOhms, 360 mOhms (2)
- 201 mOhms (1)
- 215 mOhms, 215 mOhms (1)
- 22 mOhms (1)
- 23 mOhms (1)
- 230 mOhms (1)
- 24 mOhms (2)
- 266 mOhms, 266 mOhms (3)
- 266 mOhms, 745 mOhms (3)
- 270 mOhms, 270 mOhms (3)
- 280 mOhms (1)
- 290 mOhms (1)
- 290 mOhms, 220 mOhms (1)
- 292 mOhms (1)
- 3 Ohms (3)
- 3.3 Ohms (2)
- 3.5 Ohms (1)
- 3.6 Ohms (1)
- 3.7 Ohms (2)
- 3.8 Ohms (2)
- 325 mOhms (1)
- 35 mOhms (2)
- 350 mOhms (1)
- 375 mOhms (1)
- 375 mOhms, 300 mOhms (1)
- 38 mOhms (1)
- 4 Ohms (1)
- 4.4 Ohms (2)
- 4.5 Ohms (2)
- 411 mOhms, 411 mOhms (1)
- 43 mOhms (2)
- 45 mOhms (2)
- 460 mOhms, 460 mOhms (1)
- 48 mOhms (1)
- 5 Ohms (2)
- 5.28 Ohms (1)
- 5.7 Ohms, 5.7 Ohms (1)
- 55 mOhms (1)
- 550 mOhms (1)
- 550 mOhms, 900 mOhms (1)
- 56 mOhms (1)
- 59 mOhms (1)
- 6 Ohms (2)
- 60 mOhms (1)
- 600 mOhms (1)
- 63 mOhms (1)
- 7.5 Ohms (1)
- 7.8 Ohms (1)
- 70 mOhms (1)
- 700 mOhms, 700 mOhms (2)
- 750 mOhms, 1.05 Ohms (1)
- 780 mOhms (1)
- 8 Ohms (1)
- 8.1 Ohms, 8.1 Ohms (1)
- 83 mOhms (1)
- 85 mOhms (1)
- 90 mOhms (1)
- 900 mOhms (1)
- 99 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
-
- - 0.9 V, 0.9 V (1)
- - 1 V (1)
- - 1.15 V (1)
- - 1.2 V (3)
- - 1.2 V, - 1.2 V (5)
- - 1.3 V (1)
- - 2 V (2)
- - 2.5 V (1)
- - 2.6 V (4)
- 0.45 V, - 1.5 V (1)
- 0.45 V, 0.45 V (1)
- 0.6 V (1)
- 0.6 V, 0.6 V (1)
- 0.75 V, - 0.8 V (1)
- 0.85 V (2)
- 0.92 V, - 0.83 V (1)
- 1 V, - 1 V (1)
- 1 V, - 2.6 V (1)
- 1 V, 1 V (2)
- 1.1 V, 1.1 V (3)
- 1.2 V (5)
- 1.5 V (4)
- 1.5 V, 1.5 V (3)
- 1.6 V (1)
- 1.8 V, - 1.8 V (1)
- 2.5 V (1)
- 2.6 V (1)
- 2.8 V (1)
- 3.1 V (2)
- 300 mV, 300 mV (3)
- 350 mV, 350 mV (1)
- 400 mV (1)
- 450 mV, 450 mV (1)
- 500 mV, 500 mV (2)
- 700 mV (2)
- 700 mV, - 1.2 V (3)
- 700 mV, 700 mV (3)
- 750 mV, 750 mV (1)
- 800 mV, - 2.6 V (2)
- 800 mV, 800 mV (2)
- Qg - Gate Charge :
-
- - 0.7 nC (1)
- - 2.9 nC (1)
- - 5.7 nC (2)
- - 620 pC, - 620 pC (2)
- 0.33 nC (1)
- 0.34 nC (1)
- 0.35 nC (1)
- 0.36 nC (2)
- 0.45 nC, 0.76 nC (1)
- 0.52 nC (1)
- 0.55 nC (1)
- 0.6 nC (3)
- 0.7 nC (1)
- 0.8 nC (2)
- 0.87 nC (1)
- 0.9 nC (1)
- 0.93 nC, 1 nC (1)
- 1 nC, 1 nC (1)
- 1.05 nC, 1.05 nC (1)
- 1.15 nC, 1.15 nC (1)
- 1.2 nC, 1.2 nC (1)
- 1.23 nC, 1.23 nC (2)
- 1.25 nC, 1.25 nC (1)
- 1.3 nC, 2.2 nC (2)
- 1.4 nC, 1.3 nC (2)
- 1.4 nC, 1.6 nC (1)
- 1.43 nC (1)
- 1.57 nC (1)
- 1.58 nC (1)
- 10 nC (3)
- 2 nC (3)
- 2.1 nC, 2.1 nC (2)
- 2.2 nC (1)
- 2.2 nC, 2.2 nC (1)
- 260 pC, 260 pC (3)
- 270 pC, 270 pC (1)
- 3.9 nC (1)
- 320 pC, 320 pC (3)
- 340 pC, - 400 pC (3)
- 390 pC, 390 pC (1)
- 4 nC (1)
- 400 pC, 400 pC (1)
- 5 nC (1)
- 5.1 nC (1)
- 5.2 nC (1)
- 5.4 nC (1)
- 5.5 nC (1)
- 500 pC, 500 pC (1)
- 6.5 nC (1)
- 600 pC (2)
- 600 pC, 600 pC (3)
- 7 nC (1)
- 7.2 nC (2)
- 7.3 nC (1)
- 8.6 nC (1)
- 800 pC (2)
- 870 pC, 870 pC (2)
- 900 pC, 900 pC (1)
- Tradename :
- Applied Filters :
183 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 0.2 Ohms, 0.2 Ohms | 0.45 V, 0.45 V | 1.25 nC, 1.25 nC | Enhancement | |||||
|
2,976
In-stock
|
Diodes Incorporated | MOSFET BSS Family | SOT-363-6 | Reel | Si | |||||||||||||||||
|
65,622
In-stock
|
Nexperia | MOSFET 60 V, 320 mA dual N-ch Trench MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.7 nC | Enhancement | ||||||
|
21,269
In-stock
|
Diodes Incorporated | MOSFET 60 / -50V 200mW | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 115 mA | 4.4 Ohms | Enhancement | |||||||
|
31,054
In-stock
|
Nexperia | MOSFET N-CH 60 V 320 mA | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.8 nC | ||||||||||
|
13,790
In-stock
|
Vishay Semiconductors | MOSFET 20V 1.3A 1.25W | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
30,717
In-stock
|
onsemi | MOSFET 20V 0.88mA P-Channel ESD Protection | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 880 mA | 600 mOhms | Enhancement | |||||||
|
22,760
In-stock
|
Vishay Semiconductors | MOSFET 20V 0.70A | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
6,391
In-stock
|
Siliconix / Vishay | MOSFET P-Chnl 150-V (D-S) | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
11,246
In-stock
|
Vishay Semiconductors | MOSFET -20V 41mOhm@4.5V 4A P-Ch G-III | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
17,384
In-stock
|
Diodes Incorporated | MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC | +/- 20 V, +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 650 mA, 450 mA | 200 mOhms, 360 mOhms | 800 mV, - 2.6 V | 1.4 nC, 1.3 nC | Enhancement | |||||
|
10,201
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 305 mA | 3 Ohms | Enhancement | |||||||
|
8,786
In-stock
|
Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | |||||||
|
6,885
In-stock
|
Vishay Semiconductors | MOSFET 60V 0.37A 0.51W | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
12,981
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2 nC | Enhancement | ||||||
|
13,153
In-stock
|
Nexperia | MOSFET N-CH TRENCH DL 20V | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 870 mA | 280 mOhms | Enhancement | |||||||
|
5,480
In-stock
|
Vishay Semiconductors | MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
9,023
In-stock
|
Nexperia | MOSFET N-CH TRENCH DL 60V | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 490 mA | 780 mOhms | Enhancement | |||||||
|
9,332
In-stock
|
Vishay Semiconductors | MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 100 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.6 A | 0.23 Ohms | - 2.5 V | 5.4 nC | Enhancement | TrenchFET | ||||
|
10,237
In-stock
|
Diodes Incorporated | MOSFET 250mW 20V | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | |||||||
|
13,248
In-stock
|
Nexperia | MOSFET N-CH TRENCH DL 20V | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 860 mA | 290 mOhms | Enhancement | |||||||
|
4,781
In-stock
|
Vishay Semiconductors | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.7 A | 0.045 Ohms | 0.6 V | 5.2 nC | Enhancement | TrenchFET | ||||
|
8,016
In-stock
|
Vishay Semiconductors | MOSFET -30V 54mOhm@10V 4A P-Ch G-III | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
17,914
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | |||||
|
5,391
In-stock
|
Vishay Semiconductors | MOSFET 100V 200mOhm@10V 2.3A N-Ch | SOT-363-6 | Reel | Si | TrenchFET | ||||||||||||||||
|
7,887
In-stock
|
onsemi | MOSFET PCH 1.5A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.5 A | 325 mOhms | - 2.6 V | 2.2 nC | ||||||
|
7,330
In-stock
|
onsemi | MOSFET PCH+NCH 2.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA | 3.7 Ohms | 1.58 nC | |||||||
|
11,066
In-stock
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | |||||
|
6,000
In-stock
|
Diodes Incorporated | MOSFET 250mW 60Vdss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | Enhancement | |||||||
|
7,326
In-stock
|
onsemi | MOSFET NCH 1.7A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1.8 A | 188 mOhms | 2.6 V | 2 nC |