- Series :
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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 150V | 5.1A (Ta) | 44 mOhm @ 3.1A, 10V | 4V @ 250µA | 53nC @ 10V | 1783pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 30V | 18A (Ta) | 6.5 mOhm @ 15A, 4.5V | 1V @ 250µA | 60nC @ 5V | 5500pF @ 16V | 4.5V | ±12V | 3.1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 1.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 150V | 1.9A (Ta) | 280 mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 5.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 2.5W | Logic Level Gate | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 30V 4A/3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 1.4W | Logic Level Gate | 30V | 4A, 3A | 50 mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 4.3A | 90 mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 22nC @ 4.5V | 610pF @ 15V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 30V | 5.3A | 50 mOhm @ 2.7A, 10V | 3V @ 100µA | 21nC @ 10V | 515pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N and P-Channel | 2W | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 6.2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 30V | 6.2A | 38 mOhm @ 5A, 4.5V | 1V @ 250µA | 10.5nC @ 5V | 780pF @ 16V |
