RF MOSFET Transistors - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Gain
	BF 998 E6327	1+ $0.450 10+ $0.342 100+ $0.186 1000+ $0.139 9000+ $0.112		PDF RFQ	11,112 In-stock	Infineon Technologies	RF MOSFET Transistors N-CH 12 V 30 mA	SMD/SMT	SOT-143	+ 150 C	Reel	Si	N-Channel	12 V	30 mA
	2SK4037(TE12L,Q)	1+ $3.000 10+ $2.710 25+ $2.420 100+ $2.180 1000+ $2.180		PDF RFQ	939 In-stock	Toshiba	RF MOSFET Transistors N-Ch Radio Freq 3A 20W 12V VDSS	SMD/SMT	PW-X-4		Reel	Si	N-Channel	12 V	3 A	11.5 dB
	BG 3130 H6327	9000+ $0.105 18000+ $0.096 45000+ $0.093 99000+ $0.089	GET PRICE VIEW	PDF RFQ		Infineon Technologies	RF MOSFET Transistors RF MOSFETS	SMD/SMT	SOT-363	+ 150 C	Reel	Si	N-Channel	12 V	25 mA	24 dB
	BG 3130R H6327	9000+ $0.105 18000+ $0.096 45000+ $0.093 99000+ $0.089	GET PRICE VIEW	PDF RFQ		Infineon Technologies	RF MOSFET Transistors RF MOSFETS	SMD/SMT	SOT-363	+ 150 C	Reel	Si	N-Channel	12 V	25 mA	24 dB

BF 998 E6327

BF 998 E6327

Infineon Technologies

RF MOSFET Transistors N-CH 12 V 30 mA

Stock : 11,112

1+: $0.450

10+: $0.342

100+: $0.186

1000+: $0.139

9000+: $0.112

2SK4037(TE12L,Q)

2SK4037(TE12L,Q)

Toshiba

RF MOSFET Transistors N-Ch Radio Freq 3A 20W 12V VDSS

Stock : 939

1+: $3.000

10+: $2.710

25+: $2.420

100+: $2.180

1000+: $2.180

BG 3130 H6327

BG 3130 H6327

Infineon Technologies

RF MOSFET Transistors RF MOSFETS

Stock : 0

9000+: $0.105

18000+: $0.096

45000+: $0.093

99000+: $0.089

GET PRICE

BG 3130R H6327

BG 3130R H6327

Infineon Technologies

RF MOSFET Transistors RF MOSFETS

Stock : 0

9000+: $0.105

18000+: $0.096

45000+: $0.093

99000+: $0.089

GET PRICE

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