- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Length :
- Width :
- Height :
- Pd - Power Dissipation :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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- Typical Turn-On Delay Time :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Rise Time | Fall Time | Transistor Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | unit weight | Factory Pack Quantity | RoHS | Id - Continuous Drain Curren | trademark | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Widt | |
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GET PRICE |
6,551
In-stock
|
Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | ||||||||||||||||||
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GET PRICE |
23,351
In-stock
|
Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | 1 N-Channel | Toshiba | ||||||||||||||||||||||||||||||||||
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GET PRICE |
7,335
In-stock
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Toshiba Semiconductor | MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(... | PW-Mold-3 | 1 Channel | 6.5 mm | 5.5 mm | 2.3 mm | Single | Si | N-Channel | 1 N-Channel | MOSFETs | ||||||||||||||||||||||||||||||
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24,907
In-stock
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onsemi | MOSFET N-Ch LL UltraFET PWM Optimized | 20 V | - 55 C | + 175 C | ISL9N310 | 1 Channel | 10.29 mm | 7.88 mm | Single | Si | N-Channel | Enhancement | 52 ns | 36 ns | 1 N-Channel | 2.387 g | 62 A | 15 mOhms | 70 W | 39 ns | 11 ns | 4.83 mm | ||||||||||||||||||||
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50,000
In-stock
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onsemi | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | 16 V | Through Hole | - 40 C | + 150 C | Tube | 1 Channel | 6.8 mm | 2.5 mm | 6.3 mm | 225 W | Single | Si | N-Channel | 30 V | 5.5 mOhms | Enhancement | 145 ns, 55 ns | 18 ns | 1 N-Channel | 30 ns, 40 ns | 22 ns, 14 ns | 0.084199 oz | 50 | N | 75 A | |||||||||||||||
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40,000
In-stock
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Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns |