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- Maximum Operating Temperature :
- Configuration :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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126
In-stock
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Infineon Technologies | IGBT Modules HYBRID PACK1 | IGBT Silicon Modules | HybridPack1 | + 150 C | 1250 W | 3-Phase | 650 V | 1.7 V | 500 A | 400 nA | |||
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17
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 225A | IGBT Silicon Modules | Econo D | + 125 C | 1250 W | Dual | 1200 V | 3.7 V | 225 A | 400 nA | |||
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3
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 200A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1250 W | Dual | 1700 V | 2.45 V | 310 A | 100 nA | |||
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GET PRICE |
140
In-stock
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | HybridPack1 | + 150 C | 1250 W | 3-Phase | 650 V | 1.7 V | 500 A | 400 nA | ||
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GET PRICE |
18,400
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 400A 650V | IGBT Silicon Modules | Module | + 150 C | 1250 W | IGBT-Inverter | 650 V | 1.55 V | 485 A | 400 nA | ||
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34
In-stock
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Infineon Technologies | IGBT Modules HYBRID PACK2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1250 W | 3-Phase | 650 V | 1.4 V | 530 A | 400 nA |