- Mounting Style :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
166
In-stock
|
IXYS | IGBT Transistors | Through Hole | TO-264-3 | + 150 C | Tube | 625 W | Single | 3 kV | 2.7 V | 130 A | +/- 200 nA | +/- 25 V | |||
|
|
97
In-stock
|
IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | ||||
|
|
40
In-stock
|
IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 40 A | +/- 100 nA | +/- 20 V | ||||
|
|
49
In-stock
|
IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 3 kV | 2.7 V | 50 A | +/- 100 nA | +/- 20 V | |||
|
|
29
In-stock
|
IXYS | IGBT Transistors | SMD/SMT | TO-268HV-2 | + 150 C | 500 W | Single | 3 kV | 2.5 V | 104 A | +/- 200 nA | +/- 25 V | ||||
|
|
40
In-stock
|
IXYS | IGBT Transistors | SMD/SMT | TO-268-2 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | ||||
|
|
16
In-stock
|
IXYS | IGBT Transistors High Voltage High Gain BIMOSFET | Through Hole | ISOPLUS i4-Pak-3 | + 150 C | 357 W | Single | 3 kV | 2.7 V | 86 A | +/- 200 nA | +/- 25 V | ||||
|
|
18
In-stock
|
IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | Tube | 150 W | Single | 3 kV | 2.7 V | 34 A | +/- 20 V |
