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- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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599
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A... | Through Hole | MAX-247-3 | + 175 C | 625 W | Single | 650 V | 1.65 V | 160 A | +/- 250 uA | +/- 20 V | |||||
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46
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 735 W | Single | 1.7 kV | 2.5 V | 160 A | 200 nA | +/- 20 V | ||||
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204
In-stock
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IXYS | IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 625 W | Single | 650 V | 1.65 V | 160 A | 100 nA | 20 V | ||||
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118
In-stock
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IXYS | IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 625 W | Single | 650 V | 1.65 V | 160 A | 100 nA | 20 V | ||||
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11
In-stock
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IXYS | IGBT Transistors 72 Amps 600V | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 360 W | Single | 600 V | 1.35 V | 160 A | 100 nA | +/- 20 V | ||||
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52
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A | Through Hole | TO-247-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 160 A | 100 nA | 30 V | ||||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V | |||||
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179
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.55 V | 160 A | 200 nA | +/- 20 V | ||||
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194
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.7 V | 160 A | 200 nA | +/- 20 V | ||||
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260
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW VF | Through Hole | TO-247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 2.3 V | 160 A | 200 nA | +/- 20 V | ||||
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3,400
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-264-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.1 V | 160 A | +/- 100 nA | +/- 20 V |