- Mounting Style :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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176
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 100 A | +/- 400 nA | +/- 20 V | |||
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645
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked | Through Hole | TO-247AD | + 150 C | Tube | 600 W | 600 V | 2.3 V | 100 A | 100 nA | 20 V | ||||
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428
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | |||
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472
In-stock
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Fairchild Semiconductor | IGBT Transistors 650 V 100 A 240 W | Through Hole | TO-247 | + 175 C | Tube | 240 W | 650 V | 2.1 V | 100 A | 400 nA | 25 V | ||||
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401
In-stock
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Fairchild Semiconductor | IGBT Transistors FS3 650V SHD prolferation | Through Hole | TO-3PN | + 175 C | Tube | 268 W | Single | 650 V | 2.28 V | 100 A | +/- 400 nA | +/- 30 V | |||
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467
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 319 W | 650 V | 2.14 V | 100 A | 400 nA | 30 V | ||||
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217
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | |||
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GET PRICE |
3,500
In-stock
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Infineon Technologies | IGBT Transistors HIGH SPEED SWITCHING | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 2.25 V | 100 A | 100 nA | 20 V | ||
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213
In-stock
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Infineon Technologies | IGBT Transistors HIGH SPEED SWITCHING | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 2.25 V | 100 A | 100 nA | 20 V | |||
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272
In-stock
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Infineon Technologies | IGBT Transistors 600V 50A 333W | Through Hole | TO-247-3 | + 150 C | Tube | 333 W | 600 V | 1.85 V | 100 A | 100 nA | 20 V | ||||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V | |||
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20
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 600V/100 Amp | Through Hole | TO-247AD | + 150 C | Tube | 600 W | 600 V | 2.3 V | 100 A | 100 nA | 20 V | ||||
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1,137
In-stock
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onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | |||
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442
In-stock
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onsemi | IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 349 W | Single | 1.2 kV | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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185
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
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116
In-stock
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onsemi | IGBT Transistors 650V/60A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 650 V | 1.64 V | 100 A | 200 nA | +/- 20 V | |||
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46
In-stock
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onsemi | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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146
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
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150
In-stock
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onsemi | IGBT Transistors FSII 50A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 1.8 V | 100 A | 200 nA | +/- 20 V | |||
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100
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | 1.042 kW | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V | ||||
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36
In-stock
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Infineon Technologies | IGBT Transistors 1200V 100A GAR CH | Screw | IS4 (34 mm )-5 | + 150 C | 625 W | Single | 1200 V | 2.5 V | 100 A | 400 nA | +/- 20 V | ||||
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33
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V | |||
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11
In-stock
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STMicroelectronics | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode | Through Hole | TO-247 | + 150 C | Tube | 360 W | 1.8 V | 100 A | 250 nA | +/- 20 V | |||||
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20
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V |
