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98 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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204
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack | Through Hole | TO-264-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 164 A | 100 nA | 30 V | |||
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456
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | ||||
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265
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 175 C | 536 W | Single | 600 V | 1.45 V | 155 A | 600 nA | 30 V | ||||
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119
In-stock
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IXYS | IGBT Transistors 650V/166A XPT Copacked SOT-227B | SMD/SMT | SOT-227B-4 | + 175 C | Tube | 600 W | Single | 650 V | 1.85 V | 166 A | 100 nA | 30 V | |||
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260
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 1150 W | Single | 1200 V | 2.9 V | 188 A | 100 nA | 30 V | |||
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452
In-stock
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IXYS | IGBT Transistors 650V/80A XPT Copacked TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.85 V | 80 A | 100 nA | 30 V | |||
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338
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.45 V | 80 A | 400 nA | 30 V | |||
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422
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT proliferation | Through Hole | TO-3PN | + 175 C | Tube | 238 W | Single | 600 V | 1.8 V | 80 A | 400 nA | 30 V | |||
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805
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V proliferation PFC home application | Through Hole | TO-3PN | + 175 C | Tube | 176 W | Single | 600 V | 1.8 V | 60 A | 400 nA | 30 V | |||
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467
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 319 W | 650 V | 2.14 V | 100 A | 400 nA | 30 V | ||||
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35
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 500 W | Single | 1200 V | 2.75 V | 105 A | 100 nA | 30 V | |||
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105
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 833 W | Single | 1.2 kV | 1.7 V | 200 A | 600 nA | 30 V | ||||
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182
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 600 V | 1.5 V | 107 A | 600 nA | 30 V | |||
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180
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 4.2 V | 90 A | 100 nA | 30 V | |||
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98
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 543 W | Single | 1.2 kV | 1.7 V | 134 A | 600 nA | 30 V | ||||
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75
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 175 C | 625 W | Single | 600 V | 1.5 V | 229 A | 600 nA | 30 V | ||||
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50
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | SMD/SMT | SOT-227-4 | + 150 C | Bulk | 379 W | Single | 1.2 kV | 1.7 V | 124 A | 600 nA | 30 V | |||
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246
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 250 W | Single | 1.2 kV | 3.2 V | 36 A | 480 nA | 30 V | ||||
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247
In-stock
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IXYS | IGBT Transistors 650V/130A XPT C3-Class TO-263 | SMD/SMT | TO-263-2 | + 175 C | Tube | 600 W | Single | 650 V | 2.1 V | 130 A | 100 nA | 30 V | |||
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351
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 1.81 V | 80 A | 400 nA | 30 V | ||||
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185
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 2.14 V | 80 A | 400 nA | 30 V | ||||
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413
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 238 W | 650 V | 2.14 V | 60 A | 400 nA | 30 V | ||||
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172
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 306 W | Single | 650 V | 1.8 V | 120 A | 400 nA | 30 V | |||
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30
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 230 W | Single | 1200 V | 4 V | 36 A | 100 nA | 30 V | |||
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72
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 417 W | Single | 1.2 kV | 3.3 V | 69 A | 100 nA | 30 V | ||||
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97
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 64 A | 100 nA | 30 V | |||
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55
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V | ||||
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1,862
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 347 W | Single | 1.2 kV | 3.2 V | 54 A | 120 nA | 30 V | ||||
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125
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 347 W | Single | 1.2 kV | 3.2 V | 54 A | 120 nA | 30 V | |||
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22
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V |
