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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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275
In-stock
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Fairchild Semiconductor | IGBT Transistors FS2 TIGBT excellent swtching performance | Through Hole | TO-247-4 | + 175 C | Tube | 555 W | Single | 1.2 kV | 1.8 V | 80 A | +/- 400 nA | +/- 25 V | |||
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131
In-stock
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Fairchild Semiconductor | IGBT Transistors FS3 TIGBT Excellent switching performan | Through Hole | TO-247-4 | + 175 C | Tube | 455 W | Single | 650 V | 1.6 V | 150 A | 400 nA | +/- 20 V | |||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V | ||||
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30
In-stock
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onsemi | IGBT Transistors 1200V/50 FAST IGBT FSII T | Through Hole | TO-247-4 | + 175 C | Tube | 268 W | 1200 V | 2.8 V | 200 A | 200 nA | 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | TO-247-4 | Tube | ||||||||||||
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VIEW | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | TO-247-4 | Tube | ||||||||||||
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VIEW | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | TO-247-4 | Tube | ||||||||||||
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VIEW | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | TO-247-4 | Tube |
