- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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352
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 306 W | Single | 650 V | 1.8 V | 120 A | +/- 400 nA | +/- 20 V | |||
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3,620
In-stock
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Infineon Technologies | IGBT Transistors 600V 40A 306W | Through Hole | TO-247-3 | + 150 C | Tube | 306 W | 600 V | 1.95 V | 80 A | 100 nA | 20 V | ||||
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172
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 306 W | Single | 650 V | 1.8 V | 120 A | 400 nA | 30 V | |||
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190
In-stock
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Infineon Technologies | IGBT Transistors 600V 40A 306W | Through Hole | TO-247 | + 150 C | Tube | 306 W | 600 V | 1.95 V | 80 A | 100 nA | 20 V | ||||
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37
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 306 W | Single | 600 V | 1.65 V | 80 A | 100 nA | 20 V | |||
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40
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AD-3 | + 175 C | Tube | 306 W | Single | 600 V | 1.65 V | 80 A | 100 nA | 20 V |
