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Packaging :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW30M65DF2
1+
$3.230
10+
$2.750
100+
$2.380
250+
$2.260
RFQ
553
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A l... Through Hole TO-247-3 + 175 C   258 W Single 650 V 1.55 V 60 A + / - 250 nA +/- 20 V
STGW30V60DF
1+
$3.210
10+
$2.730
100+
$2.360
250+
$2.240
RFQ
412
In-stock
STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT Through Hole TO-247 + 175 C Tube 258 W Single 600 V 2.35 V 60 A 250 nA 20 V
STGWT30V60DF
1+
$3.560
10+
$3.020
100+
$2.620
250+
$2.490
RFQ
289
In-stock
STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 258 W Single 600 V 2.35 V 60 A 250 nA 20 V
STGP30V60DF
1+
$2.890
10+
$2.450
100+
$1.960
500+
$1.720
RFQ
426
In-stock
STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT Through Hole TO-220 + 175 C Tube 258 W Single 600 V 2.35 V 60 A 250 nA 20 V
STGB30V60DF
1+
$3.820
10+
$3.070
100+
$2.790
250+
$2.520
1000+
$1.900
RFQ
835
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT D2PAK-3 + 175 C Reel 258 W Single 600 V 1.85 V 60 A 250 nA 20 V
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