PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT50GN60BDQ2G	1+ $7.320 10+ $6.590 25+ $6.000 100+ $5.420	PDF RFQ	182 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-247-3	+ 175 C	Tube	366 W	Single	600 V	1.5 V	107 A	600 nA	30 V
APT50GN60BG	1+ $6.710 10+ $5.390 25+ $5.300 100+ $4.920	PDF RFQ	61 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-247-3	+ 175 C		366 W	Single	600 V	1.5 V	107 A	600 nA	30 V
NGTB40N65FL2WG	1+ $5.250 10+ $4.460 100+ $3.870 250+ $3.670	PDF RFQ	301 In-stock	onsemi	IGBT Transistors 650V/40A FAST IGBT FSII T	Through Hole	TO-247-3	+ 175 C	Tube	366 W	Single	650 V	2.1 V	80 A	200 nA	20 V
NGTB40N60FL2WG	1+ $5.060 10+ $4.300 100+ $3.730 250+ $3.540	PDF RFQ	210 In-stock	onsemi	IGBT Transistors 600V/40A FAST IGBT FSII T	Through Hole	TO-247-3	+ 175 C	Tube	366 W	Single	600 V	1.85 V	80 A	200 nA	20 V