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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Number of Channels :
Pd - Power Dissipation :
Configuration :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Rise Time :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vf - Forward Voltage Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels Length Width Height Pd - Power Dissipation Configuration Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Channel Mode Output Type Isolation Voltage Maximum Collector Emitter Voltage Maximum Collector Current Maximum Collector Emitter Saturation Voltage Current Transfer Ratio Rise Time Fall Time Transistor Type Product Type Typical Turn-Off Delay Time Typical Turn-On Delay Time Subcategory Factory Pack Quantity
2SK2842
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6,551
In-stock
Toshiba Semiconductor MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB...   30 V SMD/SMT SC-62-3 - 55 C + 150 C   Reel 1 Channel 4.6 mm 2.5 mm 1.6 mm 40 W Single Si N-Channel 500 V 12 A 520 mOhms   Enhancement             22 ns 36 ns 1 N-Channel         50
TLP180
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24,500
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Toshiba Semiconductor Transistor Output Optocouplers AC input 80V 3750Vrms 1.3 V   SMD/SMT SOP-4 - 55 C + 100 C TLP180   1 Channel 3.6 mm 4.4 mm 2.5 mm 200 mW 1 Channel               NPN Phototransistor 3750 Vrms 80 V 50 mA 0.2 V 600 %       Transistor Output Optocouplers        
TPCS8204
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45,000
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Toshiba Semiconductor MOSFET   12 V SMD/SMT TSSOP-Advance-8 - 55 C + 150 C     2 Channel 3.65 mm 3.5 mm 0.75 mm 1.1 W Dual Si N-Channel 20 V 6 A 17 mOhms   Enhancement             5 ns 10 ns            
SSM6J412TU
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RFQ
60,500
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Toshiba Semiconductor MOSFET     SMD/SMT UF6-6           2 mm 1.7 mm 0.7 mm     Si                                     MOSFETs  
SSM3K35FS(T5L,F,T)
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RFQ
40,000
In-stock
Toshiba Semiconductor MOSFET   4 V SMD/SMT     + 150 C     1 Channel 1.6 mm 0.8 mm 0.7 mm 100 mW Single Si N-Channel 20 V 180 mA 3 Ohms 400 mV Enhancement                 1 N-Channel   300 ns 115 ns    
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